P. Pinzelli: search on Z-Library

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1

Multigate MOSFET in a Bulk Technology by Integrating Polysilicon-Filled Trenches

Ramadout, B., Guo-Neng Lu,, Carrere, J.-P., Pinzelli, L., Perrot, C., Rivoire, M., Nemouchi, F.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 480 KB

english, 2009

2

Évaluation d’une chaîne de survie intrahospitalière dédiée

A. Toutain, J. Tobarias, M. Bisbal, B. Eon, P. Pinzelli, M. Gainnier, P. Michelet

Journal:

Annales françaises de médecine d'urgence

Year:

2012

Language:

french

File:

PDF, 550 KB

french, 2012

3

High-K dielectric deposition in 3D architectures: The case of Ta2O5 deposited with metal–organic precursor TBTDET

L. Pinzelli, M. Gros-Jean, Y. Bréchet, F. Volpi, A. Bajolet, J.-C. Giraudin

Journal:

Microelectronics Reliability

Year:

2007

Language:

english

File:

PDF, 163 KB

english, 2007

4

Parasitic bipolar impact in 32 nm undoped channel Ultra-Thin BOX (UTBOX) and biased Ground Plane FDSOI high-k/metal gate technology

C. Fenouillet-Beranger, P. Perreau, P. Boulenc, L. Tosti, S. Barnola, F. Andrieu, O. Weber, R. Beneyton, C. Perrot, C. de Buttet, F. Abbate, Y. Campidelli, L. Pinzelli, P. Gouraud, A. Margain, S. Peru

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 2.68 MB

english, 2012

5

Dopant diffusion and activation induced by sub-melt laser anneal within the co-implanted p+ polycrystalline silicon gate used in CMOS technologies

A. Colin, P. Morin, R. Beneyton, Luc Pinzelli, D. Mathiot, E. Fogarassy

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 611 KB

english, 2010

6

Challenges and opportunity in performance, variability and reliability in sub-45 nm CMOS technologies

F. Arnaud, L. Pinzelli, C. Gallon, M. Rafik, P. Mora, F. Boeuf

Journal:

Microelectronics Reliability

Year:

2011

Language:

english

File:

PDF, 1.67 MB

english, 2011

7

Isomérie de rotation dans le 2,3-dibromopropionate de tributylétain

J.C. Maire, R. Pinzelli

Journal:

Journal of Organometallic Chemistry

Year:

1970

File:

PDF, 297 KB

1970

8

[IEEE ESSDERC 2011 - 41st European Solid State Device Research Conference - Helsinki, Finland (2011.09.12-2011.09.16)] 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - Parasitic bipolar impact in 32nm undoped channel Ultra-Thin BOX (UTBOX) and biased ground plane FDSOI high-k/metal gate technology

Fenouillet-Beranger, C., Perreau, P., Boulenc, P., Tosti, L., Barnola, S., Andrieu, F., Weber, O., Beneyton, R., Perrot, C., de Buttet, C., Abbate, F., Campidelli, Y., Pinzelli, L., Gouraud, P., Marga

Year:

2011

Language:

english

File:

PDF, 1.12 MB

english, 2011

9

[IEEE Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - Grenoble, France (12-16 Sept. 2005)] Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. - Three-dimensional 35 nF/mm/sup 2/ MIM capacitors integrated in BiCMOS technology

Bajolet, A., Giraudin, J.-C., Rossato, C., Pinzelli, L., Bruyere, S., Cremer, S., Jagueneau, T., Delpech, P., Montes, L., Ghibaudo, G.

Year:

2005

Language:

english

File:

PDF, 448 KB

english, 2005

10

In situ electric field simulation in metal/insulator/metal capacitors

Gaillard, Nicolas, Pinzelli, Luc, Gros-Jean, Mickael, Bsiesy, Ahmad

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 731 KB

english, 2006

11

[IEEE 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2013.04.22-2013.04.24)] 2013 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Junction engineering for FDSOI technology speed/power enhancement

Weber, O., Planes, N., Barral, V., Barge, D., Richard, E., Dumont, B., Perreau, P., Petit, D., Golanski, D., Fenouillet-Beranger, C., Guillot, N., Lagrasta, S., Gouraud, P., Campidelli, Y., Pinzelli,

Year:

2013

Language:

somali

File:

PDF, 845 KB

somali, 2013

12

Réactions d'addition du triphénylstannane sur le phénylacétylène: Obtention d'un gem-bis(triphénylstannyl)éthane

M. Delmas, J.C. Maire, R. Pinzelli

Journal:

Journal of Organometallic Chemistry

Year:

1969

File:

PDF, 490 KB

1969

13

Infrared intensities as a quantitative measure of intramolecular interactions—XVII: Phenyl and vinyl alkyl ethers and suphides

A.R. Katritzky, R.F. Pinzelli, R.D. Topsom

Journal:

Year:

1972

Language:

english

File:

PDF, 439 KB

english, 1972

14

ChemInform Abstract: ROTATIONSISOMERIE IM TRIBUTYLZINN-2,3-DIBROMPROPIONAT

MAIRE, J. C., PINZELLI, R.

Journal:

Chemischer Informationsdienst. Organische Chemie

Year:

1970

File:

PDF, 111 KB

1970

15

Infrared intensities as a quantitative measure of intramolecular interactions—VIII: Alkyl vinyl ketones and alkyl phenyl ketones

A.R. Katritzky, R.F. Pinzelli, R.D. Topsom

Journal:

Year:

1972

Language:

english

File:

PDF, 1.00 MB

english, 1972

16

ChemInform Abstract: IR-INTENSITAETEN ALS QUANTITATIVES MASS FUER INTRAMOLEKULARE WECHSELWIRKUNGEN 16. MITT. 2-SUBSTITUIERTE THIOPHENE UND FURANE

ANGELELLI, J. M., KATRITZKY, A. R., PINZELLI, R. F., TOPSOM, R. D.

Journal:

Chemischer Informationsdienst

Year:

1972

File:

PDF, 105 KB

1972

17

The diffusion of liquids into resins and composites

J. M. Marshall, G. P. Marshall, R. F. Pinzelli

Journal:

Polymer Composites

Year:

1982

Language:

english

File:

PDF, 591 KB

english, 1982

18

Infrared intensities as a quantitative measure of intramolecular interactions. XV. Monosubstituted ethylenes

Katritzky, Alan R., Pinzelli, R. F., Sinnott, M. V., Topsom, R. D.

Journal:

Journal of the American Chemical Society

Year:

1970

Language:

english

File:

PDF, 692 KB

english, 1970

19

Infrared intensities as a quantitative measure of intramolecular interactions—XVI : 2-Substituted thiophenes and furans

J.M. Angelelli, A.R. Katritzky, R.F. Pinzelli, R.D. Topsom

Journal:

Year:

1972

Language:

english

File:

PDF, 873 KB

english, 1972

20

ChemInform Abstract: INFRAROTINTENSITAETEN ALS QUANTITATIVES MASS INTRAMOLEKULARER WECHSELWIRKUNGEN 17. MITT. PHENYL- UND VINYL-ALKYL-AETHER UND -SULFIDE 18. MITT. PHENYL- UND VINYL-ALKYL-KETONE

KATRITZKY, A. R., PINZELLI, R. F., TOPSON, R. D.

Journal:

Chemischer Informationsdienst

Year:

1972

File:

PDF, 102 KB

1972

21

Cu surface treatment influence on Si adsorption properties of CuSiN self-aligned barriers for sub-65 nm technology node

S. Chhun, L.G. Gosset, J. Michelon, V. Girault, J. Vitiello, M. Hopstaken, S. Courtas, C. Debauche, P.H.L. Bancken, N. Gaillard, G. Bryce, M. Juhel, L. Pinzelli, J. Guillan, R. Gras, B. Van Schravendi

Journal:

Microelectronic Engineering

Year:

2006

Language:

english

File:

PDF, 901 KB

english, 2006

22

Resonance interactions in substituted ethylenes

Angelelli, Jean M., Katritzky, Alan R., Pinzelli, R. F., Sinnott, M. V., Topsom, R. D.

Journal:

Journal of the American Chemical Society

Year:

1969

Language:

english

File:

PDF, 232 KB

english, 1969

23

Challenges in CMOS-based images

Roy, Francois, Tournier, A., Wehbe-Alause, H., Blanchet, F., Boulenc, P., Leverd, F., Favennec, L., Perrot, C., Pinzelli, L., Gatefait, M., Cherault, N., Jeanjean, D., Carrere, J. P., Augier, C., Ricq

Journal:

Physica status solidi

Year:

2014

Language:

english

File:

PDF, 1.27 MB

english, 2014

24

ChemInform Abstract: IR-INTENSITAETEN ALS QUANTITATIVES MASS INTRAMOLEKULARER WECHSELWIRKUNGEN 12.-15. MITT.

BROXTON, T. J., DEADY, L. W., KATRITZKY, A. R., LIU, A., TOPSOM, R. D., BROWNLEE, R. T. C., SINNOTT, M. V., SZAFRAN, M., YAKHONTOV, L., KEOGH, H. J., OHLENROTT, S., PINZELLI, R. F.

Journal:

Chemischer Informationsdienst. Organische Chemie

Year:

1971

File:

PDF, 153 KB

1971

25

[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - Effects of technological and geometrical parameters of a tri-gate MOSFET fabricated in a bulk technology

Ramadout, B., Lu, G.-N., Carrere, J.P., Pinzelli, L., Perrot, C., Rivoire, M., Nemouchi, F.

Year:

2010

Language:

english

File:

PDF, 2.52 MB

english, 2010

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